Samsung is showing off its newest 16GB NAND flash memory with its customers. This is the first NAND flash that uses 50-nanometer process technology, a breakthrough of sorts.
Samsung is using a multi-level cell (MLC) design with a 4KB page size in this high density NAND chip. The company claims that the new 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance 150%.
By nearly doubling the overall performance of Samsung’s MLC NAND, mobile consumers hope to enjoy faster data transfer speeds when storing or reading large data files whether they’re using an external memory card, or a handset with a built-in flash solution.
Samsung plans to begin mass production of its 16GB NAND flash memory in the first quarter of 2007.