South Koreaâ€™s Hynix Semiconductor Inc. says they have developed the industry’s fastest mobile memory chip with error correction code. The Hynix 185MHz 512Megabit mobile DDR SDRAM with ECC has a throughput of up to 1.5Gbytes of data per second.
Hynix said the ECC feature in this product allows for the extension of the refresh interval which in turn significantly reduces power consumption. Additionally, the 512Mb ECC Mobile DDR offers the traditional low power features necessary for a wide range of mobile applications. These features include reduced power supply voltage, temperature compensated self refresh (TCSR), partial array self refresh (PASR), and deep power down (DPD) modes.
Hynixâ€™s 512Mb ECC mobile DDR is manufactured using the companyâ€™s 80nm process technology and is offered in JEDEC standard pin-out and packages.