Seoul-based Hynix Semiconductor, Inc. today announced that its DDR3 memory components and modules have been validated by Intel.
Hynixâ€™s newly-validated products include the 1Gigabit DDR3 SDRAM component manufactured on the companyâ€™s 80nm process technology, as well as 1Gigabyte and 2Gigabyte DDR3 unbuffered DIMMs.
The new memory modules tout operating speeds of 800MHz and 1066MHz at 1.5V power supply, the fastest according to Hynix.
Aside from speed, Hynix said DDR3 features reduced current consumption of almost 25%, compared to the present generation DDR2.
DDR3 is the next generation DRAM interface which is expected to succeed the current mainstream DDR2 products. Mass production of the 1Gb DDR3 on the 80nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66nm process beginning in late 2007.