Samsung’s New Stacking Process Makes Smaller, Faster DRAM

Samsung DRAM

Samsung has developed a new all-DRAM stacked memory package that promises to be smaller, faster and more power efficient.

It’s called the wafer-level-processed stacked package, WSP, and it’s made up of four 512 megabit (Mb) DDR2 (second generation, double data rate) DRAM chips that offer a combined 2 gigabits (Gb) of high density memory. By using ‘through silicon via,’ Samsung can create a 4Gb DIMM (dual in-line memory module based on WSP.

Samsung’s WSP technology laser-cuts very tiny holes that penetrate the silicon vertically to connect the memory circuits directly with a copper filling, eliminating the need for gaps of extra space and wires protruding beyond the sides of the dies.

Bottom line: Samsung’s WSP offer a significantly smaller footprint and thinner package, an advantage in an industry that demands high density, high performance semiconductor solutions to support the next generation of computing systems.

[Site: Samsung.com]

Chris Malinao

About Chris Malinao

Chris teaches Lightroom as workflow software to photography students at the FPPF, Federation of Philippine Photographers Foundation. He also teaches smartphone photography.

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