Samsung has developed a new all-DRAM stacked memory package that promises to be smaller, faster and more power efficient.
Itâ€™s called the wafer-level-processed stacked package, WSP, and itâ€™s made up of four 512 megabit (Mb) DDR2 (second generation, double data rate) DRAM chips that offer a combined 2 gigabits (Gb) of high density memory. By using â€˜through silicon via,â€™ Samsung can create a 4Gb DIMM (dual in-line memory module based on WSP.
Samsungâ€™s WSP technology laser-cuts very tiny holes that penetrate the silicon vertically to connect the memory circuits directly with a copper filling, eliminating the need for gaps of extra space and wires protruding beyond the sides of the dies.
Bottom line: Samsungâ€™s WSP offer a significantly smaller footprint and thinner package, an advantage in an industry that demands high density, high performance semiconductor solutions to support the next generation of computing systems.