Samsung’s New Stacking Process Makes Smaller, Faster DRAM

Samsung DRAM

Samsung has developed a new all-DRAM stacked memory package that promises to be smaller, faster and more power efficient.

It’s called the wafer-level-processed stacked package, WSP, and it’s made up of four 512 megabit (Mb) DDR2 (second generation, double data rate) DRAM chips that offer a combined 2 gigabits (Gb) of high density memory. By using ‘through silicon via,’ Samsung can create a 4Gb DIMM (dual in-line memory module based on WSP.

Samsung’s WSP technology laser-cuts very tiny holes that penetrate the silicon vertically to connect the memory circuits directly with a copper filling, eliminating the need for gaps of extra space and wires protruding beyond the sides of the dies.

Bottom line: Samsung’s WSP offer a significantly smaller footprint and thinner package, an advantage in an industry that demands high density, high performance semiconductor solutions to support the next generation of computing systems.


Published by Chris Malinao

Chris teaches Lightroom as workflow software to photography students at the FPPF, Federation of Philippine Photographers Foundation. He also teaches smartphone photography.